FDMC8854 Datasheet, MOSFET, ON Semiconductor

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FDMC8854 Features and benefits

* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
* Low Profile − 1 mm Max in Power 33
* This Device is Pb−.

FDMC8854 Application

Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
*.

FDMC8854 Description

This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V,.

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